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PDF STY140NS10 Data sheet ( Hoja de datos )
| Número de pieza | STY140NS10 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STY140NS10
N-CHANNEL 100V - 0.009 Ω - 140A MAX247™
MESH OVERLAY™ POWER MOSFET
TYPE
VDSS
RDS(on)
STY140NS10
100V <0.011Ω
s TYPICAL RDS(on) = 0.009Ω
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED
ID
140A
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced
family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termination
structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SWITCH MODE POWER SUPPLY (SMPS)
3
2
1
Max247™
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS(1) Single Pulse Avalanche Energy
dv/dt (2) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
August 2001
.
Value
Unit
100 V
100 V
± 20 V
140 A
99 A
560 A
450 W
3 W/°C
2900
mJ
5 V/ns
-55 to 175
°C
-55 to 175
°C
(1) Starting Tj = 25 oC, ID = 70A, VDD= 50V
(2) ISD ≤140A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/8
1 page  
Normalized Gate Threshold Voltage vs Temperature
STY140NS10
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STY140NS10.PDF ] | |
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