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PDF STY16NA90 Data sheet ( Hoja de datos )
| Número de pieza | STY16NA90 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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® STY16NA90
N - CHANNEL 900V - 0.5 Ω - 16A - Max247
EXTREMELY LOW GATE CHARGE POWER MOSFET
TYPE
STY16NA90
V DSS
900 V
RDS(on)
< 0.54 Ω
ID
16 A
s TYPICAL RDS(on) = 0.5 Ω
s EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
s ± 30V GATE TO SOURCE VOLTAGE RATING
s REPETITIVE AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
T he Max247 TM package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
PRELIMINARY DATA
Max247TM
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1998
Value
900
900
± 30
16
10
64
300
2.4
-55 to 150
150
Uni t
V
V
V
A
A
A
W
W/oC
oC
oC
1/5
1 page  
STY16NA90
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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.
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