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PDF CSC2655 Data sheet ( Hoja de datos )
| Número de pieza | CSC2655 | |
| Descripción | COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CSC2655 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS1w6w9w49.DaantadSISheOe9t40U0.1coCmertified Company
COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
CSA1020 PNP
CSC2655 NPN
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
PC
Tj, Tstg
50
50
5
2
900
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
min
typ
Collector Emitter Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation
Voltage
Base Emitter Saturation Voltage
BVCEO
ICBO
IEBO
hFE
VCE(sat)
IC=10mA,IB=0
VCB=50V, IE = 0
VEB=5V, IC = 0
VCE=2V,IC=500mA *
VCE=2V,IC=1.5A
IC=1A, IB=50mA
VBE(sat) IC=1A, IB=50mA
50
-
-
70
40
-
-
DYNAMIC CHARACTERISTICS
Gain Bandwidth Product
Output Capacitance
Switching Time
Turn on Time
Storage Time
Fall Time
Classification
hFE*
fT IC=500mA, VCE=2V
-
Cob IE=0, VCB=10V,f=1MHz
PNP -
NPN -
100
40
30
ton VCC=30V, IB1=IB2=
tstg 50mA, RL=30Ω
tf Duty Cycle=1%
O
70 - 140
-
-
-
Y
120 - 240
0.1
1.0
0.1
UNIT
V
V
V
A
mW
ºC
max
-
1.0
1.0
240
-
0.5
1.2
UNIT
V
µA
µA
V
V
- MHz
- PF
- PF
- us
- us
- us
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CSC2655.PDF ] | |
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