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PDF STS2DNF30L Data sheet ( Hoja de datos )
| Número de pieza | STS2DNF30L | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STS2DNF30L (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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STS2DNF30L
N-CHANNEL 30V - 0.09 Ω - 3A SO-8
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS2DNF30L
30 V <0.011 Ω
3A
s TYPICAL RDS(on) = 0.09 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
Single Operating
ID Drain Current (continuos) at TC = 100°C
Single Operating
IDM(•) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C Dual Operating
Total Dissipation at TC = 25°C Single Operating
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
February 2002
.
Value
30
30
± 18 V
3
1.9
9
1.6
2
-55 to 150
150
Unit
V
V
V
A
A
A
W
W
°C
°C
1/8
1 page  
Normalized Gate Threshold Voltage vs Temperature
STS2DNF30L
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS2DNF30L.PDF ] | |
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