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PDF STS2NF100 Data sheet ( Hoja de datos )

Número de pieza STS2NF100
Descripción N-CHANNEL POWER MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STS2NF100 Hoja de datos, Descripción, Manual

STS2NF100
N-CHANNEL 100V - 0.23 - 6A SO-8
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STS2NF100
100 V <0.26
s TYPICAL RDS(on) = 0.23
s EXCEPTIONAL dv/dt CAPABILITY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
ID
6A
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(•)
Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(••) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dV/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(••) Pulse width limited by safe operating area.
(•) Current limited by the package
October 2002
.
Value
100
100
± 20
2
1.3
8
2.5
0.016
40
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-65 to 175
°C
(1) ISD 2A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 3A, VDD = 50V
1/8

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STS2NF100 pdf
Normalized Gate Threshold Voltage vs Temperature
STS2NF100
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
..
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