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PDF STS25NH3LL Data sheet ( Hoja de datos )
| Número de pieza | STS25NH3LL | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STS25NH3LL
N-CHANNEL 30V - 0.0032 Ω - 25A SO-8
STripFET™ III MOSFET FOR DC-DC CONVERSION
TYPE
VDSS
RDS(on)
ID
STS25NH3LL
30 V <0.0035 Ω 25 A
s TYPICAL RDS(on) = 0.0032 Ω @ 10V
s OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
DESCRIPTION
The STS25NH3LL utilizes the latest advanced design
rules of ST's propetary STripFET™ technology. This
novel 0.6µ process coupled to unique metalization
techniques re alizes the most advanced low voltage
MOSFET in SO-8 ever produced. It is therefore suit able
for the most demanding DC-DC converter applications
where high efficiency is to be achived at high output
current.
APPLICATIONS
s DC-DC CONVERTERS FOR TELECOM AND
NOTEBOOK CPU CORE
s SYNCHRONOUS RECTIFIER
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
EAS (1) Single Pulse Avalanche Energy
Ptot Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
September 2003
.
Value
30
30
± 18
25
18
100
200
3.2
(1) Starting Tj = 25 oC ID = 12.5A
VDD = 30V
Unit
V
V
V
A
A
A
mJ
W
1/8
1 page  
Normalized Gate Threshold Voltage vs Temperature
STS25NH3LL
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS25NH3LL.PDF ] | |
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