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PDF STN4NE03L Data sheet ( Hoja de datos )
| Número de pieza | STN4NE03L | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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® STN4NE03L
N - CHANNEL 30V - 0.037Ω - 4A - SOT-223
STripFET™ POWER MOSFET
TYPE
ST N4NE03L
VDSS
30 V
RDS(on)
< 0.05 Ω
ID
4A
s TYPICAL RDS(on) = 0.037 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ” Single Feature
Size™ ” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
s POWER MANAGEMENT IN
BATTERY-OPERATED AND PORTABLE
EQUIPMENT
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID(*)
ID(*)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*) Limited by package
August 1998
Value
Uni t
30 V
30 V
± 15
V
4A
2.5 A
16 A
2.5
0.02
W
W/oC
6 V/ ns
-65 to 150
oC
150 oC
(1)ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TjMAX
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STN4NE03L
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
®
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STN4NE03L.PDF ] | |
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