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PDF STN4NF03L Data sheet ( Hoja de datos )
| Número de pieza | STN4NF03L | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STN4NF03L
N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STN4NF03L
30V <0.05Ω
s TYPICAL RDS(on) = 0.039Ω
s LOW THRESHOLD DRIVE
ID
6.5A
DESCRIPTION
This Power Mosfet is the latest development of STMi-
croelectronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(q) Pulse width limited by safe operating area
Value
30
30
±16
6.5
4.5
26
3.3
0.026
200
–55 to 175
(1) Starting Tj=25°C, ID=6.5A, VDD=15V
December 2002
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
1/8
1 page  
STN4NF03L
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STN4NF03L.PDF ] | |
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