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PDF STS3C2F100 Data sheet ( Hoja de datos )
| Número de pieza | STS3C2F100 | |
| Descripción | COMPLEMENTARY PAIR STripFETTM POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STS3C2F100
N-CHANNEL 100V - 0.110 Ω - 3A SO-8
P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8
COMPLEMENTARY PAIR STripFET™ POWER MOSFET
TYPE
VDSS RDS(on)
ID
STS3C2F100(N-Channel) 100 V < 0.145Ω 3.0 A
STS3C2F100(P-Channel) 100 V < 0.380Ω 1.5 A
■ TYPICAL RDS(on) (N-Channel) = 0.110 Ω
■ TYPICAL RDS(on) (P-Channel) = 0.320 Ω
■ STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
■ ULTRA LOW GATE CHARGE
■ ULTRA LOW ON-RESISTANCE
DESCRIPTION
This MOSFET is the second generation of STMicroelec-
tronis unique "Single Feature Size™" strip-based pro-
cess. The resulting transistor shows extremely high
packing density for low on-resistance, rugged avalanche
characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR DRIVES
■ AUDIO AMPLIFIER
SO-8
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STS3C2F100
MARKING
S3C2F100
PACKAGE
SO-8
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
June 2004
.
N-CHANNEL
P-CHANNEL
Unit
100 V
100 V
± 20
V
3.0 1.5 A
1.9 1.0 A
12 6 A
2W
-55 to 150
°C
150 °C
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
Rev.1.0.1
1/11
1 page  
Gate Charge vs Gate-source Voltage n-ch
Capacitance Variations n-ch
STS3C2F100
Normalized Gate Threshold Voltage vs Temperature n-ch
Normalized on Resistance vs Temperature n-ch
Source-drain Diode Forward Characteristics n-ch
Normalized Breakdown Voltage vs Temperature n-ch
5/11
5 Page 
STS3C2F100
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners.
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
www.st.com
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