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PDF STS3DPF20V Data sheet ( Hoja de datos )
| Número de pieza | STS3DPF20V | |
| Descripción | DUAL P-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STS3DPF20V
DUAL P-CHANNEL 20V - 0.090 Ω - 3A SO-8
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS3DPF20L
20 V
<0.11 Ω
3A
s TYPICAL RDS(on) = 0.090 Ω @ 4.5 V
s TYPICAL RDS(on) = 0.1 Ω @ 2.7 V
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s MOBILE PHONE APPLICATIONS
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
20 V
VDGR Drain-gate Voltage (RGS = 20 kΩ)
20 V
VGS Gate- source Voltage
± 12
V
ID
Drain Current (continuous) at TC = 25°C Single Operation
Drain Current (continuous) at TC = 100°C Single Operation
3
1.9
A
A
IDM(•) Drain Current (pulsed)
12 A
Ptot
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at TC = 25°C Single Operation
1.6 W
2W
(•) Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
June 2002
1/8
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1 page  
Normalized Gate Threshold Voltage vs Temperature
STS3DPF20V
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS3DPF20V.PDF ] | |
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