|
|
PDF IS75V16F128GS32 Data sheet ( Hoja de datos )
| Número de pieza | IS75V16F128GS32 | |
| Descripción | 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM | |
| Fabricantes | ISSI | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IS75V16F128GS32 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
IS75V16F128GS32
ISSI®
3.0 Volt Multi-Chip Package (MCP)
— 128 Mbit Simultaneous Operation Flash
Memory and 32 Mbit Pseudo Static RAM
MCP FEATURES
• Power supply voltage 2.7V to 3.3V
• High performance:
Flash: 70ns maximum access time
PSRAM: 65ns maximum access time
• Package: 107-ball BGA
• Operating Temperature: -30C to +85C
FLASH FEATURES
• Power Dissipation:
Read Current at 1 Mhz: 4 mA maximum
Read Current at 5 Mhz:18 mA maximum
Sleep Mode: 5 µA maximum
• User Configurable Banks
Flash 1 (64 Mbit)
Bank A1: 8Mbit (8KB x 8 and 64KB x 15)
Bank B1: 24Mbit (64KB x 48)
Bank C1: 24Mbit (64KB x 48)
Bank D1: 8Mbit (8KB x 8 and 64KB x 15)
Flash 2 (64 Mbit)
Bank A2: 8Mbit (8KB x 8 and 64KB x 15)
Bank B2: 24Mbit (64KB x 48)
Bank C2: 24Mbit (64KB x 48)
Bank D2: 8Mbit (8KB x 8 and 64KB x 15)
User chooses two virtual banks from a
combination of four physical banks
• Simultaneous R/W Operations (dual virtual bank):
Zero latency between read and write operations; Data
can be programmed or erased in one bank while data
is simultaneously being read from the other bank
• Low-Power Mode:
A period of no activity causes flash to enter a
low-power state
• Erase Suspend/Resume:
Suspends of erase activity to allow a read in the
same bank
• Sector Erase Architecture:
16 sectors of 4K words each and 126 sectors of 32K words
each in Word mode. Any combination of sectors, or
the entire flash can be simultaneously erased
PRELIMINARY INFORMATION
MARCH 2003
• Erase Algorithms:
Automatically preprograms/erases the flash memory
entirely, or by sector
• Program Algorithms:
Automatically writes and verifies data at specified
address
• Hidden ROM Region:
256 byte with a Factory-serialized secure electronic
serial number (ESN), which is accessible through a
command sequence
• Data Polling and Toggle Bit:
Detects the completion of the program or erase cycle
• Ready-Busy Outputs (RY/BY)
Detection of program or erase cycle completion for
each flash chip
• Over 100,000 write/erase cycles
• Low supply voltage (Vccf ≤ 2.5V) inhibits writes
• WP/ACC input pin:
If VIL, allows partial protection of boot sectors
If VIH, allows removal of boot sector protection
If Vacc, program time is improved
PSRAM FEATURES (32 Mb density)
• Power Dissipation:
Operating: 25 mA maximum
Standby: 110 µA maximum
• Chip Selects: CE1r, CE2r
• Power down feature using CE2r
Sleep Mode: 10 µA maximum
Nap: 65 µA maximum
8 mbit Partial: 80 µA maximum
• Data retention supply voltage: 2.1 V to 3.3V
• Byte data control: LB (DQ0–DQ7), UB
(DQ8–DQ15)
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products. FlexBankTM is a trademark
of Fujitsu Limited, Japan. Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00D
03/24/03
1
1 page  
IS75V16F128GS32
ISSI®
ABSOLUTE MAXIMUM RATINGS(1,5)
Symbol
Tstg
TA
VIN,VOUT
Parameter
Storage Temperature
Ambient Temperature with Power Applied
Voltage with Respect to Ground All Pins(2)
Rating
Min.
Max.
–55 +125
–30 +85
–0.3
VCC + 0.3(6)
Unit
°C
°C
V
VCCf1,VCCf2
VCCr
VCCf Supply(2)
VCCr Supply(2)
–0.3 3.5
–0.3 3.5
V
V
VIN RESET1, RESET2(3)
-0.5 +13.0
V
VACC
WP/ACC(4)
–0.5 +10.5
V
Notes:
1. Voltage is defined on the basis of GND = 0 V.
2. Minimum DC voltage on input or I/O pins is -0.3 V. During voltage transitions, input or I/O pins may undershoot
GND to -1.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCCf1+ 0.3V , VCCf2+ 0.3V
or VCCr + 0.3 V. During voltage transitions, input or I/O pins may overshoot to VCCf1+ 2.0V , VCCf2+ 2.0 V or VCCr + 1.0 V
for periods of up to 20 ns.
3. Minimum DC input voltage on RESET1 or RESET2 pin is -0.5 V. During voltage transitions, RESET1 or RESET2 pin may
undershoot GND to -2.0 V for periods of up to 20 ns.
The voltage difference between input and supply voltage (VIN-VCCf1 or VCCf2) does not exceed 9.0 V.
The maximum DC input voltage on the RESET pin is +13.0 V that may overshoot to +14.0 V for periods of up to 20 ns.
4. Minimum DC input voltage on WP/ACC pin is -0.5 V. During voltage transitions, WP/ACC pin may undershoot
GND to -2.0 V for periods of up to 20 ns. Maximum DC input voltage on WP/ACC pin is +10.5 V which may
overshoot to +12.0 V for periods of up to 20 ns, when VCCf1 or VCCf2 is applied.
5. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
6. This Vcc refers to the minimum of VCCf1, VCCf2, or Vccr .
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
TA Ambient Temperature
VCCf1,VCCf2 VCCf Supply Voltages
VCCr
VCCr Supply Voltages
Note:
Voltage is defined on the basis of GND = 0 V.
Rating
Min.
–30
2.7
2.7
Max.
+85
3.3
3.3
Unit
°C
V
V
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00D
03/24/03
5
5 Page 
IS75V16F128GS32
ISSI®
USER CONFIGURABLE BANK ARCHITECTURE TABLE - FLASH 1 or FLASH 2
Bank Split
Choice 1
Choice 2
Choice 3
Choice 4
Virtual Bank 1
Volume
8 Mbit
Combination
Bank A
24 Mbit
Bank B
24 Mbit
Bank C
8 Mbit
Bank D
Virtual Bank 2
Volume
56 Mbit
Combination
Bank B, C, D
40 Mbit
Bank A, C, D
40 Mbit
Bank A, B, D
56 Mbit
Bank A, B, C
EXAMPLE OF VIRTUAL BANKS COMBINATION TABLE - FLASH 1 or FLASH 2
Virtual Bank 1
Virtual Bank 2
Bank Split Volume Combination Sector Size
Choice 1 8 Mbit Bank A
8x4 Kword
Volume Combination
56 Mbit Bank B, C, D
Sector Size
8x4 Kword
15x32 Kword
111x32 Kword
Choice 2 16 Mbit Bank A,D
16x4 Kword
48 Mbit Bank B,C
96x32 Kword
30x32 Kword
Choice 3 24 Mbit Bank B
48x32 Kword
40 Mbit Bank A, C, D
16x4 Kword
78x32 Kword
Choice 4 32 Mbit Bank A,B 8x4 Kword
32 Mbit Bank C,D
8x4 Kword
63x32 Kword
63x32 Kword
Notes:
1) When multiple sector erase over several banks is operated, the system cannot read out of the bank to which a sector being
erased belongs. For example, if erasing is taking place at both Bank A and Bank B, neither Bank A nor Bank B is read out. They
would output the sequence flag once they were selected. Meanwhile the system would get to read from either Bank C or Bank D.
2) Each word is made-up of 2 bytes: one upper byte and one lower byte. A KWord is 210 words.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00D
03/24/03
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet IS75V16F128GS32.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IS75V16F128GS32 | 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM | ISSI |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |