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PDF MPSH10 Data sheet ( Hoja de datos )
| Número de pieza | MPSH10 | |
| Descripción | (MPSH10 / MPSH11) VHF/UHF Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MPSH10 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSH10/D
VHF/UHF Transistors
NPN Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MPSH10
MPSH11
Motorola Preferred Devices
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
PD
25 Vdc
30 Vdc
3.0 Vdc
350 mW
2.8 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0 Watts
8.0 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
Thermal Resistance, Junction to Case
RqJC
125
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
1
2
3
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
25
30
3.0
—
—
Max Unit
— Vdc
— Vdc
— Vdc
100 nAdc
100 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MPSH10.PDF ] | |
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