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PDF MC74VHC1G135 Data sheet ( Hoja de datos )

Número de pieza MC74VHC1G135
Descripción 2-Input NAND Schmitt-Trigger with Open Drain Output
Fabricantes ON Semiconductor 
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MC74VHC1G135
Product Preview
2-Input NAND
Schmitt-Trigger
with Open Drain Output
The MC74VHC1G135 is a single gate CMOS Schmitt NAND
trigger with an open drain output fabricated with silicon gate CMOS
technology. It achieves high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining CMOS low power
dissipation.
The internal circuit is composed of three stages, including an open
drain output which provides the capability to set the output switching
level. This allows the MC74VHC1G135 to be used to interface 5V
circuits to circuits of any voltage between VCC and 7V using an
external resistor and power supply.
The MC74VHC1G135 input structure provides protection when
voltages up to 7V are applied, regardless of the supply voltage.
The MC74VHC1G135 can be used to enhance noise immunity or to
square up slowly changing waveforms.
High Speed: tPD = 4.9ns (Typ) at VCC = 5V
Low Internal Power Dissipation: ICC = 2µA (Max) at TA = 25°C
Power Down Protection Provided on Inputs
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300mA
ESD Performance: HBM > 2000V; MM > 200V, CDM > 1500V
IN B 1
IN A 2
GND 3
5 VCC
OVT
4 OUT Y
http://onsemi.com
SC–88A / SOT–353
DF SUFFIX
CASE 419A
MARKING DIAGRAM
VZd
Pin 1
d = Date Code
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5 VCC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Figure 1. 5–Lead SOT–353 Pinout (Top View)
LOGIC SYMBOL
IN A &
IN B
OUT Y
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 1
1
FUNCTION TABLE
Inputs
AB
LL
LH
HL
HH
Output
Y
Z
Z
Z
L
Publication Order Number:
MC74VHC1G135/D

1 page




MC74VHC1G135 pdf
K
t
TOP
COVER
TAPE
B1 K0
SEE
NOTE 2
FOR MACHINE REFERENCE
ONLY
INCLUDING DRAFT AND RADII
CONCENTRIC AROUND B0
MC74VHC1G135
10 PITCHES
CUMULATIVE
TOLERANCE ON
P0
TAPE
±0.2 mm
D P2 (±0.008”)
E
A0 SEE NOTE 2
+ B0
+
P
EMBOSSMENT
USER DIRECTION OF FEED
FW
+
CENTER LINES
OF CAVITY
D1
FOR COMPONENTS
2.0 mm × 1.2 mm
AND LARGER
BENDING RADIUS
R MIN.
TAPE AND COMPONENTS
SHALL PASS AROUND RADIUS “R”
WITHOUT DAMAGE
EMBOSSED
CARRIER
*TOP COVER
TAPE THICKNESS (t1)
0.10 mm
(0.004”) MAX.
EMBOSSMENT
MAXIMUM COMPONENT ROTATION
10°
TYPICAL
COMPONENT CAVITY
CENTER LINE
100 mm
(3.937”)
1 mm MAX
TAPE
TYPICAL
COMPONENT
CENTER LINE
1 mm
250 mm
(0.039”) MAX (9.843”)
CAMBER (TOP VIEW)
ALLOWABLE CAMBER TO BE 1 mm/100 mm NONACCUMULATIVE OVER 250 mm
Figure 5. Carrier Tape Specifications
EMBOSSED CARRIER DIMENSIONS (See Notes 1 and 2)
Tape B1
Size Max
D
D1
E
F
K
P
P0 P2 R
T
W
8 mm 4.35 mm
(0.171”)
1.5 +0.1/
–0.0 mm
(0.059
+0.004/
–0.0”)
1.0 mm
Min
(0.039”)
1.75
±0.1 mm
(0.069
±0.004”)
3.5
±0.5 mm
(1.38
±0.002”)
2.4 mm
(0.094”)
4.0
±0.10 mm
(0.157
±0.004”)
4.0
±0.1 mm
(0.156
±0.004”)
2.0
±0.1 mm
(0.079
±0.002”)
25 mm
(0.98”)
0.3
±0.05 mm
(0.01
+0.0038/
–0.0002”)
8.0
±0.3 mm
(0.315
±0.012”)
1. Metric Dimensions Govern–English are in parentheses for reference only.
2. A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min to
0.50 mm max. The component cannot rotate more than 10° within the determined cavity
http://onsemi.com
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