|
|
PDF STP7NB30 Data sheet ( Hoja de datos )
| Número de pieza | STP7NB30 | |
| Descripción | N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STP7NB30 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
STP7NB30
® STP7NB30FP
N - CHANNEL 300V - 0.75Ω - 7A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST P7NB3 0
ST P7NB3 0FP
300 V
300 V
< 0.90 Ω
< 0.90 Ω
7A
4A
s TYPICAL RDS(on) = 0.75 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
IDM (•)
Ptot
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulation W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
August 1999
Va l u e
ST P7NB30 STP7NB30F P
300
300
± 30
74
4.4 2.5
28 28
85 30
0.68
0.24
5.5 5.5
2000
-65 to 150
150
( 1) ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
V
oC
oC
1/9
1 page  
Gate Charge vs Gate-source Voltage
STP7NB30/STP7NB30FP
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STP7NB30.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STP7NB30 | N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH MOSFET | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |