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PDF STS5DNF20V Data sheet ( Hoja de datos )
| Número de pieza | STS5DNF20V | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STS5DNF20V
N-CHANNEL 20V - 0.030 Ω - 5A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS5DNF20V
20 V
< 0.040 Ω ( @ 4.5 V )
< 0.045 Ω ( @ 2.7 V )
5A
s TYPICAL RDS(on) = 0.030 Ω @ 4.5 V
s TYPICAL RDS(on) = 0.037 Ω @ 2.7 V
s ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
Single Operation
ID
Drain Current (continuous) at TC = 100°C
Single Operation
IDM(•) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Dual Operation
Ptot
Total Dissipation at TC = 25°C
Single Operation
(•) Pulse width limited by safe operating area.
August 2002
.
Value
20
20
± 12
5
3
20
1.6
2
Unit
V
V
V
A
A
A
W
W
1/8
1 page  
Normalized Gate Threshold Voltage vs Temperature
STS5DNF20V
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS5DNF20V.PDF ] | |
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