PDF STG3157 Data sheet ( Hoja de datos )

Número de pieza	STG3157
Descripción	Low voltage low on-resistance SPDT switch
Fabricantes	ST Microelectronics
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No Preview Available ! STG3157 Low voltage low on-resistance SPDT switch with break-before-make feature Features ■ High speed: – tPD = 0.3 ns (max) at VCC = 4.5 V – tPD = 0.8 ns (max) at VCC = 3.0 V – tPD = 1.2 ns (max) at VCC = 2.3 V ■ Ultra low power dissipation: – ICC = 1 µA (max) at TA = 85 °C ■ Low on-resistance; at VIN = 0 V: – RON = 7 Ω (max TA = 85 °C) at VCC = 4.5 V – RON = 9 Ω (max TA = 85 °C) at VCC = 3.0 V ■ Wide operating voltage range: – VCC (OPR) = 1.65 V to 5.5 V single supply ■ TTL threshold ON control input at VCC = 2.7 to 3.6 V ■ Pin and function compatible with 74 series 3157 ■ Latch-up performance exceeds 150 mA (JESD 17) Description The STG3157 is a high-speed CMOS analog SPDT (single-pole double-throw) switch or 2:1 multiplexer/demultiplexer bus switch manufactured using silicon gate C2MOS technology. It is designed to operate from a 1.65 V to 5.5 V supply, making the device ideal for portable applications. The STG3157 features very low on-resistance (< 9 Ω) at VCC = 3.0 V. The IN input is provided to control the SPDT switch, and is compatible with standard CMOS output. Switch S1 is ON SOT323-6L (connected to common port D) when the IN input is held high, and OFF (a high impedance state exists between the two ports) when IN is held low. Switch S2 is ON (connected to common port D) when the IN input is held low and OFF (a high impedance state exists between the two ports) when IN is held high. Additional key features are fast switching speed, break-before-make delay time, and very low power consumption. All inputs and outputs are equipped with protection circuits to protect against static discharge, giving them immunity from ESD and transient excess voltage. Table 1. Device summary Order code STG3157CTR Package SOT323-6L Packing Tape and reel April 2010 Doc ID 9007 Rev 2 1/18 www.st.com 18 1 page STG3157 3 Electrical characteristics Electrical characteristics 3.1 Table 6. DC Electrical characteristics DC specifications Test conditions Value Symbol Parameter Vcc (V) TA = 25°C Min. Typ. Max. -40 to 85°C Min. Max. -55 to 125°C Unit Min. Max. High level 1.65-1.95 VIH input voltage 2.3-2.5 2.7-3.6 0.75VCC 0.7VCC 2 0.75VCC 0.7VCC 2 0.75VCC 0.7VCC 2 V 1.65-1.95 Low level VIL input voltage 2.3-2.5 2.7-3.6 0.25VCC 0.3VCC 0.8 0.25VCC 0.3VCC 0.8 0.25VCC 0.3VCC 0.8 V RON Switch on- resistance ΔRON On- resistance match between channels 4.5 3.0 2.3 1.65 4.5 3.0 2.3 1.65 VS = 0V IS = 30mA VS = 2.4V IS = 30mA VS = 4.5V IS = 30mA VS = 0V IS = 100mA VS = 3V IS = 24mA VS = 0V IS = 8mA VS = 2.3V IS = 8mA VS = 0V IS = 4mA VS = 1.65V IS = 4mA VS = 3.15V IS = 30mA VS = 2.1V IS = 24mA VS = 1.6V IS = 8mA VS = 1.15V IS = 4mA 4.4 7 4.9 12 6.1 15 5.2 9 7.8 20 6.5 12 9.6 30 9.0 20 14 50 0.10 0.10 0.20 0.35 79 12 14.5 15 18 9 11 20 24 Ω 12 14.5 30 36 20 24 50 60 Ω Doc ID 9007 Rev 2 5/18 5 Page STG3157 Figure 11. Switching time and charge injection Test circuits Figure 12. Charge injection (VGEN = 0 V, RGEN = 0 Ω, RL = 1 MΩ, CL = 100 pF) Doc ID 9007 Rev 2 11/18 11 Page

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