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PDF STGB10NB37LZ Data sheet ( Hoja de datos )
| Número de pieza | STGB10NB37LZ | |
| Descripción | 10A - 410V internally clamped IGBT | |
| Fabricantes | ST Microelectronics | |
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STGB10NB37LZ
STGP10NB37LZ
10 A - 410 V internally clamped IGBT
Features
■ Low threshold voltage
■ Low on-voltage drop
■ Low gate charge
■ High current capability
■ High voltage clamping feature
Applications
■ Automotive ignition
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior. The built in collector-gate Zener exhibits
a very precise active clamping while the gate-
emitter Zener supplies an ESD protection.
TAB
3
2
1
TO-220
TAB
3
1
D²PAK
Figure 1.
Internal schematic diagram
C (2,TAB)
G (1)
Table 1. Device summary
Order codes
Marking
STGB10NB37LZ
STGB10NB37LZT4
STGP10NB37LZ
GB10NB37LZ
GB10NB37LZ
GP10NB37LZ
Package
D²PAK
D²PAK
TO-220
E (3)
SC090150
Packaging
Tube
Tape and reel
Tube
November 2009
Doc ID 7402 Rev 4
1/15
www.st.com
15
1 page  
STGB10NB37LZ, STGP10NB37LZ
Electrical characteristics
Table 7.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
td(on)
tr
(di/dt)on
tc
tr(Voff)
td(off)
tf
tc
tr(Voff)
td(off)
tf
Turn-on delay time
Current rise time
Turn-on current slope
Cross-over time
Off voltage rise time
Delay time
Fall time
Cross-over time
Off voltage rise time
Delay time
Fall time
VCC = 328 V, IC = 10 A
RG= 1 kΩ, VGE = 5 V
(see Figure 19)
VCC = 328 V, IC = 10 A
RG= 1 KΩ, VGE = 5 V
(see Figure 19)
VCC = 328 V, IC = 10 A
RG= 1 kΩ, VGE = 5 V,
TJ = 125 °C
(see Figure 19)
Min. Typ. Max. Unit
1300
270
60
3.6
2
8
1.4
5.7
2.7
9.2
2.8
ns
ns
A/µs
µs
µs
µs
µs
µs
µs
µs
µs
Table 8. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon(1)
Eoff(2)
Ets
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 328 V, IC = 10 A
RG= 1 kΩ, VGE = 5 V
(see Figure 19)
VCC = 328 V, IC = 10 A
RG= 1 kΩ, VGE = 5 V,
TJ = 125 °C (see Figure 19)
2.4
5
7.4
2.6
8.7
11.3
mJ
mJ
mJ
mJ
mJ
mJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C)
2. Turn-off losses include also the tail of the collector current
Doc ID 7402 Rev 4
5/15
5 Page 
STGB10NB37LZ, STGP10NB37LZ
Package mechanical data
D²PAK (TO-263) mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
A1 0.03
0.23
0.001
0.009
b 0.70
0.93
0.027
0.037
b2 1.14
1.70
0.045
0.067
c 0.45
0.60
0.017
0.024
c2 1.23
1.36
0.048
0.053
D 8.95
9.35
0.352
0.368
D1 7.50
0.295
E 10
E1 8.50
10.40
0.394
0.334
0.409
e 2.54
0.1
e1 4.88
5.28
0.192
0.208
H 15
15.85
0.590
0.624
J1 2.49
2.69
0.099
0.106
L 2.29
2.79
0.090
0.110
L1 1.27
1.40
0.05
0.055
L2 1.30
1.75
0.051
0.069
R 0.4
0.016
V2 0°
8° 0°
8°
0079457_M
Doc ID 7402 Rev 4
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STGB10NB37LZ.PDF ] | |
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