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PDF MBR1545CT Data sheet ( Hoja de datos )

Número de pieza MBR1545CT
Descripción Schottky Rectifiers
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! MBR1545CT Hoja de datos, Descripción, Manual

MBR1535CT - MBR1560CT
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guarding for over voltage protection.
1
2
3
TO-220AB
PIN 1
PIN 3
+
CASE
PIN 2
Schottky Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
1535
VRRM
Maximum Repetitive Reverse Voltage
35
IF(AV)
Average Rectified Forward Current
.375 " lead length @ TA = 105°C
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Tstg Storage Temperature Range
TJ Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
1545 1550
45 50
1560
60
Units
V
15 A
150
-65 to +175
-65 to +150
A
°C
°C
Thermal Characteristics
Symbol
Parameter
PD Power Dissipation
RθJA Thermal Resistance, Junction to Ambient
RθJL Thermal Resistance, Junction to Lead
Value
41.7
60
3.0
Units
W
°C/W
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
VF Forward Voltage IF = 7.5 A, TC = 25°C
IF = 7.5 A, TC = 125°C
IF = 15 A, TC = 25°C
IF = 15 A, TC = 125°C
IR Reverse Current @ rated VR TA = 25°C
TA = 125°C
IRRM Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
Device
1535 1545
-
0.57
0.84
0.72
1550 1560
0.75
0.65
-
-
0.1 1.0
15 50
1.0 0.5
Units
V
V
V
V
mA
mA
A
2001 Fairchild Semiconductor Corporation
MBR1535CT - MBR1560CT, Rev. C

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