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PDF BUF742 Data sheet ( Hoja de datos )
| Número de pieza | BUF742 | |
| Descripción | Silicon NPN High Voltage Switching Transistor | |
| Fabricantes | TEMIC Semiconductors | |
| Logotipo |  |
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BUF742
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
14283
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
Tcase ≤ 25°C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
VCEO
VCEW
VCES
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
400
550
900
11
5
7.5
2.5
4
50
150
–65 to +150
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Symbol
RthJC
Value
2.5
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
1 (8)
1 page  
BUF742
Typical Characteristics (Tcase = 25_C unless otherwise specified)
6
5
4
0.1 x IC < IB2 < 0.5 x IC
3 VCEsat < 2 V
2
1
100.00
10.00
2.5K/W
12.5K/W
1.00
25K/W
50K/W
0.10
RthJA=85K/W
13706
0
0
100 200 300 400 500 600
VCE – Collector Emitter Voltage ( V )
0.01
0
13707
25 50 75 100 125 150
Tcase – Case Temperature ( °C )
Figure 4. VCEW – Diagram
Figure 7. Ptot vs.Tcase
5.0
0.6A
4.5
0.5A
4.0 0.4A
3.5
0.3A
3.0
0.2A
2.5
2.0
1.5 IB=0.1A
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 10 11
13708
VCE – Collector Emitter Voltage ( V )
Figure 5. IC vs. VCE
10.00
1.00
5A
3A
2A
0.10 1A
IC=0.5A
0.01
0.01
13709
0.10 1.00
IB – Base Current ( A )
Figure 8. VCEsat vs. IB
10.00
100 100
Tj = 125°C
10
13710
1
0.01
10V
5V
VCE=2V
0.10 1.00
IC – Collector Current ( A )
Figure 6. hFE vs. IC
10.00
75°C
25°C
10
VCE=2V
1
0.01 0.10 1.00
13711 IC – Collector Current ( A )
Figure 9. hFE vs. IC
10.00
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
5 (8)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUF742.PDF ] | |
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