|
|
Número de pieza | TPCS8102 | |
Descripción | Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TPCS8102 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! TPCS8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPCS8102
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Unit: mm
Small footprint due to small and thin package
Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
High forward transfer admittance: |Yfs| = 17 S (typ.)
Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
Enhancement-mode: Vth = −0.5~−1.2 V (VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
−20
−20
±12
−6
−24
1.5
0.6
46.8
−6
0.15
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
―
JEITA
―
TOSHIBA
2-3R1B
Weight: 0.035 g (typ.)
Circuit Configuration
1 2002-05-17
1 page TPCS8102
5 2002-05-17
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TPCS8102.PDF ] |
Número de pieza | Descripción | Fabricantes |
TPCS8101 | Effect Transistor Silicon P Channel MOS Type (U-MOS II) | Toshiba Semiconductor |
TPCS8102 | Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs | Toshiba Semiconductor |
TPCS8104 | Field Effect Transistor Silicon P Channel MOS Type | Toshiba Semiconductor |
TPCS8105 | Silicon N Channel MOS Type Field Effect Transistor | Toshiba Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |