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PDF SI7909DN Data sheet ( Hoja de datos )
| Número de pieza | SI7909DN | |
| Descripción | Dual P-Channel 12-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
Dual P-Channel 12-V (D-S) MOSFET
Si7909DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.037 @ VGS = –4.5 V
–12 0.048 @ VGS = –2.5 V
0.068 @ VGS = –1.8 V
ID (A)
–7.7
–6.8
–5.7
PowerPAK 1212-8
FEATURES
• TrenchFET® Power MOSFETS: 1.8-V Rated
• New Low Thermal Resistance PowerPAK®
Package
• Advanced High Cell Density Process
• Ultra-Low rDS(on), and High PD Capability
APPLICATIONS
• Load Switch
• PA Switch
• Battery Switch
• Bi-Directional Switch
Pb-free
Available
RoHS*
COMPLIANT
S1 S2
3.30 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
3.30 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7909DN-T1
Si7909DN–T1–E3 (Lead (Pb)–free)
G1 G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150°C)a
TA = 25°C
TA = 85°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25°C
TA = 85°C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–12
±8
–7.7 –5.3
–5.5 –3.8
–20
–2.3 –1.1
2.8 1.3
1.5 0.85
–55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t ≤ 10 sec
Steady State
RthJA
35
75
44
94 °C/W
Maximum Junction-to-Case
Steady State
RthJC
4
5
Notes
a. Surface Mounted on 1“ x 1“ FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71996
S-51210–Rev. C, 27-Jun-05
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS TA = 25°C, unless otherwise noted
2
1 Duty Cycle = 0.5
0.2
Si7909DN
Vishay Siliconix
0.1 0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71996.
Document Number: 71996
S-51210–Rev. C, 27-Jun-05
www.vishay.com
5
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