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PDF SI3445ADV Data sheet ( Hoja de datos )
| Número de pieza | SI3445ADV | |
| Descripción | P-Channel 1.8-V (G-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
P-Channel 1.8-V (G-S) MOSFET
Si3445ADV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.042 @ VGS = −4.5 V
−8 0.060 @ VGS = −2.5 V
0.080 @ VGS = −1.8 V
ID (A)
−5.8
−4.9
−4.2
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3445ADV-T1—E3
Marking Code: C5XXX
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
−8
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
−5.8
−4.4
−4.7
−3.5
−20
−1.7
−0.9
2.0 1.1
1.3 0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72859
S-40582—Rev. A, 29-Mar-04
Typical
50
90
22
Maximum
62.5
110
30
Unit
_C/W
www.vishay.com
1
1 page  
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1 0.05
0.02
Si3445ADV
Vishay Siliconix
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72859
S-40582—Rev. A, 29-Mar-04
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI3445ADV.PDF ] | |
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