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PDF IRFP2410 Data sheet ( Hoja de datos )
| Número de pieza | IRFP2410 | |
| Descripción | Fourth Generation HEXFETs | |
| Fabricantes | International Rectifier | |
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HEXFET® Power MOSFET
Preliminary Data Sheet PD - 9.1251
IRFP2410
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
Fast Switching
Ease of Paralleling
VDSS = 100V
RDS(on) = 0.025Ω
ID = 61A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
It also provides greater creepage distance between pins to meet the requirements
of most safety specifications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
61
43
240
230
1.5
±20
830
37
23
5.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
0.65
––––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
Revision 0
1 page  
70
60
50
40
30
20
10
0A
25 50 75 100 125 150 175
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFP2410
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PD M
N otes:
1. Duty factor D = t1 / t 2
t1
t2
2. Peak TJ = PD M x Z thJC + T C
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP2410.PDF ] | |
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