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Número de pieza | BSS119 | |
Descripción | SIPMOS Small-Signal Transistor | |
Fabricantes | INFINEON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSS119 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Rev. 1.0
SIPMOS Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
BSS119
Product Summary
VDS
RDS(on)
ID
100
6
0.17
V
Ω
A
Gate
pin1
Drain
pin 3
SOT23
3
Source
pin 2
2
1 VPS05161
Type
BSS119
Package
SOT23
Ordering Code Tape and Reel Information Marking
Q67000-S007 E6327: 3000 pcs/reel
sSH
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=0.17A, VDS=80V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
0.17
0.13
0.68
6
±20
0.36
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2002-12-10
1 page Rev. 1.0
BSS119
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C, VGS
0.34
A
10V
7V
6V
0.28 5V
4.8V
4.6V
0.24 4V
3.8V
0.2 3.4V
0.16
0.12
0.08
0.04
0
0 0.5 1 1.5 2 V
3
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0.34
A
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
12
Ω
3.4V
3.8V
4V
10 4.6V
4.8V
9 5V
6V
8 7V
10V
7
6
5
4
3
2
1
0
0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 A 0.34
ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0.3
S
0.28
0.24
0.2
0.16
0.12
0.08
0.04
0
0
0.8 1.6 2.4 3.2 V 4.4
VGS
0.24
0.22
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
0.04 0.08 0.12 0.16 0.2 0.24 0.28 A 0.34
ID
Page 5
2002-12-10
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BSS119.PDF ] |
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