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Número de pieza | MSM5116400B | |
Descripción | DRAM / FAST PAGE MODE TYPE | |
Fabricantes | OKI electronic componets | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MSM5116400B (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! ¡¡ SemicondSucetormiconductor
MSM5116400B
4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5116400B
E2G0033-17-41
DESCRIPTION
The MSM5116400B is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM5116400B achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5116400B is available in a 26/24-pin plastic SOJ or 26/24-pin plastic
TSOP.
FEATURES
• 4,194,304-word ¥ 4-bit configuration
• Single 5 V power supply, ±10% tolerance
• Input : TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 4096 cycles/64 ms
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Package options:
26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM5116400B-xxSJ)
26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM5116400B-xxTS-K)
(TSOPII26/24-P-300-1.27-L) (Product : MSM5116400B-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM5116400B-50
MSM5116400B-60
MSM5116400B-70
Access Time (Max.) Cycle Time
Power Dissipation
tRAC tAA tCAC tOEA
(Min.)
Operating (Max.) Standby (Max.)
50 ns 25 ns 13 ns 13 ns 90 ns
550 mW
60 ns 30 ns 15 ns 15 ns 110 ns
495 mW
5.5 mW
70 ns 35 ns 20 ns 20 ns 130 ns
440 mW
16M
207
1 page ¡ Semiconductor
MSM5116400B
DC Characteristics
(VCC = 5 V ±10%, Ta = 0°C to 70°C)
Parameter
Symbol
Condition
MSM5116400 MSM5116400 MSM5116400
B-50
B-60
B-70
Unit Note
Min. Max. Min. Max. Min. Max.
Output High Voltage
Output Low Voltage
Input Leakage Current
VOH IOH = –5.0 mA
VOL IOL = 4.2 mA
0 V £ VI £ 6.5 V;
ILI All other pins not
under test = 0 V
2.4 VCC
0 0.4
2.4 VCC
0 0.4
2.4 VCC
0 0.4
V
V
–10 10 –10 10 –10 10 mA
DQ disable
Output Leakage Current ILO 0 V £ VO £ 5.5 V
–10 10 –10 10 –10 10 mA
Average Power
Supply Current
(Operating)
RAS, CAS cycling,
ICC1 tRC = Min.
— 100 — 90 — 80 mA 1, 2
Power Supply
Current (Standby)
Average Power
RAS, CAS = VIH
ICC2 RAS, CAS
≥ VCC –0.2 V
RAS cycling,
—2
—1
—2
—1
—2
mA 1
—1
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
ICC3 CAS = VIH,
tRC = Min.
RAS = VIH,
ICC5 CAS = VIL,
DQ = enable
— 100 — 90 — 80 mA 1, 2
—5
—5
— 5 mA 1
Average Power
Supply Current
(CAS before RAS Refresh)
RAS cycling,
ICC6 CAS before RAS
— 100 — 90 — 80 mA 1, 2
Average Power
Supply Current
(Fast Page Mode)
RAS = VIL,
ICC7 CAS cycling,
tPC = Min.
— 90 — 80 — 70 mA 1, 3
Notes : 1. ICC Max. is specified as ICC for output open condition.
2. The address can be changed once or less while RAS = VIL.
3. The address can be changed once or less while CAS = VIH.
16M
211
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MSM5116400B.PDF ] |
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