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Número de pieza | STH18NB40 | |
Descripción | N-CHANNEL Power MOS MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STH18NB40 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! STW18NB40
® STH18NB40FI
N-CHANNEL 400V - 0.19Ω - 18.4A TO-247/ISOWATT218
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
STW18NB40
STH18NB40FI
400 V
400 V
< 0.26 Ω
< 0.26 Ω
18.4 A
12.4A
s TYPICAL RDS(on) = 0.19 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
PRELIMINARY DATA
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
Unit
STW18NB40 STH18NB40FI
400 V
400 V
± 30
V
18.4
12.4
A
11.6
7.8 A
73.6
73.6
A
190
1.52
80
0.64
W
W/oC
4.5 4.5 V/ns
-65 to 150
oC
150 oC
(1) ISD ≤18.4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
June 1998
1/6
1 page DIM.
A
C
D
D1
E
F
G
H
L1
L2
L3
L4
L5
L6
M
N
U
STW18NB40-STH18NB40FI
ISOWATT218 MECHANICAL DATA
MIN.
5.35
3.3
2.9
1.88
0.75
1.05
10.8
15.8
20.8
19.1
22.8
40.5
4.85
20.25
3.5
2.1
mm
TYP.
4.6
MAX.
5.65
3.8
3.1
2.08
1
1.25
11.2
16.2
21.2
19.9
23.6
42.5
5.25
20.75
3.7
2.3
MIN.
0.210
0.130
0.114
0.074
0.029
0.041
0.425
0.622
0.818
0.752
0.897
1.594
0.190
0.797
0.137
0.082
inch
TYP.
0.181
L3
N
MAX.
0.222
0.149
0.122
0.081
0.039
0.049
0.441
0.637
0.834
0.783
0.929
1.673
0.206
0.817
0.145
0.090
L2
L5 L6
M
123
L1
L4
P025C
5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet STH18NB40.PDF ] |
Número de pieza | Descripción | Fabricantes |
STH18NB40 | N-CHANNEL Power MOS MOSFET | ST Microelectronics |
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