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PDF STS10NF30L Data sheet ( Hoja de datos )
| Número de pieza | STS10NF30L | |
| Descripción | N-CHANNEL PowerMESH MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STS10NF30L (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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® STS10NF30L
N - CHANNEL 30V - 0.011Ω - 10A SO-8
STripFET™ POWER MOSFET
TYPE
V DSS
RD S( o n )
ID
STS10NF30L
30 V < 0.0135 Ω 10 A
s TYPICAL RDS(on) = 0.011 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
PRELIMINARY DATA
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique ” Single Feature
Size™ ” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
SO-8
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS Drain-source Volt age (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS G ate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot T otal Dissipation at Tc = 25 oC
(•) Pulse width limited by safe operating area
Value
30
30
± 20
10
6 .5
40
2 .5
Un it
V
V
V
A
A
A
W
June 2000
1/6
1 page  
DIM.
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
MIN.
0.1
0.65
0.35
0.19
0.25
4.8
5.8
3.8
0.4
SO-8 MECHANICAL DATA
mm
TYP.
1.27
3.81
MAX.
MIN.
1.75
0.25 0.003
1.65
0.85 0.025
0.48 0.013
0.25 0.007
0.5 0.010
45 (typ.)
5.0 0.188
6.2 0.228
4.0 0.14
1.27 0.015
0.6
8 (max.)
STS10NF30L
inch
TYP.
0.050
0.150
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023
0016023
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STS10NF30L.PDF ] | |
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