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PDF STS1DNC45 Data sheet ( Hoja de datos )

Número de pieza STS1DNC45
Descripción N-CHANNEL PowerMESH MOSFET
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STS1DNC45 Hoja de datos, Descripción, Manual

STS1DNC45
DUAL N-CHANNEL 450V - 4.1Ω - 0.4A SO-8
SuperMESH™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS1DNC45 450 V
< 4.5 Ω
0.4 A
s TYPICAL RDS(on) = 4.1Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
s SWITCH MODE LOW POWER SUPPLIES
(SMPS)
s DC-DC CONVERTERS
s LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
s LOW POWER BATTERY CHARGERS
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
450 V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
450 V
VGS Gate- source Voltage
± 30 V
ID Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
0.40
0.25
A
A
IDM ( ) Drain Current (pulsed)
1.6 A
PTOT
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at TC = 25°C Single Operation
1.6 W
2W
dv/dt(1) Peak Diode Recovery voltage slope
3 V/ns
(q) Pulse width limited by safe operating area
(1)ISD ≤ 0.4 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
June 2003
1/8

1 page




STS1DNC45 pdf
Normalized Gate Threshold Voltage vs Temp.
STS1DNC45
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Max Id Current vs Tc
Maximum Avalanche Energy vs Temperature
5/8

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Número de piezaDescripciónFabricantes
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