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Número de pieza | STS1HNC60 | |
Descripción | N-CHANNEL PowerMESH MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STS1HNC60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! STS1HNC60
N-CHANNEL 600V - 7Ω - 0.4A SO-8
PowerMesh™II MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STS1HNC60
600 V
<8Ω
0.36 A
s TYPICAL RDS(on) = 7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE LOW POWER SUPPIES
(SMPS)
s CFL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
July 2001
Value
Unit
600 V
600 V
± 30 V
0.36 A
0.22 A
1.44 A
2.5 W
0.028
W/°C
3.5 V/ns
–65 to 150
°C
150 °C
(1)ISD ≤ 0.36 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/6
1 page STS1HNC60
DIM.
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
MIN.
0.1
0.65
0.35
0.19
0.25
4.8
5.8
3.8
0.4
SO-8 MECHANICAL DATA
mm
TYP.
1.27
3.81
MAX.
MIN.
1.75
0.25 0.003
1.65
0.85 0.025
0.48 0.013
0.25 0.007
0.5 0.010
45 (typ.)
5.0 0.188
6.2 0.228
4.0 0.14
1.27 0.015
0.6
8 (max.)
inch
TYP.
0.050
0.150
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023
0016023
5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet STS1HNC60.PDF ] |
Número de pieza | Descripción | Fabricantes |
STS1HNC60 | N-CHANNEL PowerMESH MOSFET | ST Microelectronics |
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