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Número de pieza | MPSA55 | |
Descripción | PNP Silicon Amplifier Transistor | |
Fabricantes | [Micro Commercial Components | |
Logotipo | ||
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MPSA55
MPSA56
Features
• Capable of 1.5Watts of Power Dissipation.
• Collector-current 500mA
• Collector-base Voltage 80V
• Operating and storage junction temperature range: -55OC to +150OC
Pin Configuration
Bottom View
CB E
Maximum Ratings
Symbol
Rating
Rating
Unit
VCEO Collector-Emitter Voltage
80 V
VCBO
Collector-Base Voltage
80 V
VEBO Emitter-Base Voltage
4.0 V
IC Collector Current Continuous
PD Total Device Dissipation @TA=25OC
Derate above 25OC
500 mA
625 mW
5.0 mW/OC
PD Total Device Dissipation @TA=25OC
1.5
W
Derate above 25OC
12 mW/OC
TJ
TSTG
Junction Temperature
Storage Temperature
-55 to +150
-55 to +150
OC
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage(1)
(IC=1.0mAdc, IB=0)
MPSA55
MPSA56
60
80
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
ICES Collector Cutoff Current
(VCE=60Vdc, IB=0)
ICBO Collector Cutoff Current
(VCB=60Vdc, IE=0)
MPSA55
(VCB=80Vdc, IE=0)
MPSA56
ON CHARACTERISTICS (1)
4.0
Vdc
0.1 uAdc
0.1 uAdc
0.1
hFE(1)
DC Current Gain
(IC=10mAdc, VCE=1.0Vdc)
hFE(2)
DC Current Gain
(IC=100mAdc, VCE=1.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
VBE(on)
Base-Emitter Saturation Voltage
(IC=100mAdc, VCE=1.0Vdc)
SMALL-SIGNAL CHARACTERISTICS
100
100
0.25 Vdc
1.2 Vdc
fT Current-Gain – Bandwidth Product(3)
(IC=100mAdc, VCE=1.0Vdc,
f=100MHz)
MPSA55
50
MPSA56
MHz
1. Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
PNP Silicon
Amplifier Transistor
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM MIN
MAX
A .175 .185
B .175 .185
C .500
---
D .016 .020
E .135 .145
G .095 .105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet MPSA55.PDF ] |
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