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Número de pieza | MBN400C20 | |
Descripción | IGBT Module / Silicon N Channel IGBT | |
Fabricantes | Hitachi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBN400C20 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! IGBT MODULE
MBN400C20
Silicon N-channel IGBT
OUTLINE DRAWING
FEATURES
Unit in mm
* High thermal fatigue durability.
(delta Tc=70°C,N>20,000cycles)
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
*High speed,low loss IGBT module.
*Low driving power due to low input
capacitance MOS gate.
*High reliability,high durability module.
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Weight: 350 (g)
E
E
G
C
TERMINALS
Item Symbol
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
DC
1ms
DC
1ms
VCES
VGES
IC
ICp
IF
IFM
Pc
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Terminals(M4/M8)
Mounting(M5)
Tj
Tstg
VISO
-
-
Notes: (1)Recommended Value 1.8±0.2/9±1N.m
Unit MBN400C20
V 2,000
V ±20
A
400
800
A
400
800
W 3,000
°C -40 ~ +125
°C -40 ~ +125
VRMS
N.m
4,000(AC 1 minute)
2/10
2.8
(2)Recommended Value 2.6±0.2N.m
(1)
(2)
CHARACTERISTICS (Tc=25°C )
Item
Symbol Unit Min. Typ. Max.
Test Conditions
Collector Emitter Cut-Off Current
I CES
mA
-
- 4.0 VCE=2,000V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
- ±200 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Input Capacitance
Rise Time
Switching Times
Turn On Time
Fall Time
VCE(sat)
VGE(TO)
Cies
tr
ton
tf
V
V
nF
ms
- 4.2 5.2 IC=400A,VGE=15V
4.0 5.1 7.0 VCE=10V, IC =400mA
- 46 100 VCE=10V,VGE=0V,f=100KHz
- 1.4 2.3 VCC=1,000V,Ic=400A
- 1.7 2.6 L=200nH
- 1.8 2.4 RG=12W (3)
Turn Off Time
toff
- 4.0 5.9 VGE=±15V Tc=125°C
Peak Forward Voltage Drop
VFM V - 2.4 3.4 -Ic=400A,VGE=0V
Reverse Recovery Time
trr ms - 0.5 0.9 Vcc=1,000V,-Ic=400A,L=200nH,
Tc=125°C (4)
Thermal Impedance IGBT
Rth(j-c) °C/W -
- 0.033
Junction to case
FWD
Rth(j-c)
- - 0.10
Notes:(3) RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
(4) Counter arm IGBT VGE=-15V
PDE-N400C20-0
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MBN400C20.PDF ] |
Número de pieza | Descripción | Fabricantes |
MBN400C20 | IGBT Module / Silicon N Channel IGBT | Hitachi |
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