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Número de pieza | STP60NE06L-16 | |
Descripción | N-CHANNEL Power MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP60NE06L-16 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! STP60NE06L-16
® STP60NE06L-16FP
N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
V DSS
RDS(on)
ID
STP60NE06L-16
60 V < 0.016 Ω 60 A
STP60NE06L-16FP 60 V < 0.016 Ω 35 A
s TYPICAL RDS(on) = 0.014 Ω
s AVALANCHE RUGGED TECHNOLOGY
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique ”Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V DS
V DGR
VGS
ID
ID
IDM (•)
Ptot
Drain-source Volt age (VGS = 0)
Drain- gat e Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
Ts tg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 2000
Value
Unit
STP60NE06L-16 STP60NE06L-16FP
60 V
60 V
± 15
V
60 35 A
42 24 A
240 140 A
150 45 W
1 0.3 W/oC
2000
V
6
-65 to 175
175
( 1) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ ns
oC
oC
1/9
1 page Gate Charge vs Gate-source Voltage
STP60NE06L-16/FP
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet STP60NE06L-16.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP60NE06L-16 | N-CHANNEL Power MOSFET | ST Microelectronics |
STP60NE06L-16FP | N-CHANNEL POWER MOSFET | ST Microelectronics |
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