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PDF NTMS10P02R2 Data sheet ( Hoja de datos )
| Número de pieza | NTMS10P02R2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | On Semiconductor | |
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NTMS10P02R2
Power MOSFET
−10 Amps, −20 Volts
P−Channel Enhancement−Mode
Single SO−8 Package
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SO−8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• SO−8 Mounting Information Provided
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 3.)
Thermal Resistance −
Junction−to−Ambient (Note 2.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 3.)
Operating and Storage
Temperature Range
VDSS
VGS
RθJA
PD
ID
ID
PD
ID
IDM
RθJA
PD
ID
ID
PD
ID
IDM
TJ, Tstg
−20
"12
Vdc
Vdc
50
2.5
−10
−8.0
0.6
−5.5
−50
°C/W
W
A
A
W
A
A
80
1.6
−8.8
−6.4
0.4
−4.5
−44
−55 to
+150
°C/W
W
A
A
W
A
A
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = −20 Vdc, VGS = −4.5 Vdc,
Peak IL = 5.0 Apk, L = 40 mH,
RG = 25 Ω)
EAS
500 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260 °C
1. Mounted onto a 2″ square FR−4 Board (1″ sq. Cu 0.06″ thick single sided),
t = 10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. Cu 0.06″ thick single sided),
t = steady state.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2%.
http://onsemi.com
−10 AMPERES
−20 VOLTS
14 mW @ VGS = −4.5 V
P−Channel
D
G
S
8
1
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM
& PIN ASSIGNMENT
Source
Source
Source
Gate
1
2
3
4
E10P02
LYWW
8
Drain
7
Drain
6
Drain
5
Drain
Top View
E10P02
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTMS10P02R2 SO−8
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 2
1
Publication Order Number:
NTMS10P02R2/D
1 page  
NTMS10P02R2
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
2.0 VGS = 0 V
TJ = 25°C
1.6
100
100 ms
10 1.0 ms
1.2
VGS = 2.5 V
10 ms
SINGLE PULSE
0.8 1.0 TC = 25°C
0.4
0
0.50 0.55 0.60 0.65 0.70
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage versus Current
0.1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
dc
10
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 13. Diode Reverse Recovery Waveform
TYPICAL ELECTRICAL CHARACTERISTICS
10
1.0 D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
1.0E−05 1.0E−04
1.0E−03
Normalized to θja at 10s.
Chip 0.0163 Ω 0.0652 Ω 0.1988 Ω 0.6411 Ω 0.9502 Ω
0.0307 F 0.1668 F 0.5541 F 1.9437 F 72.416 F Ambient
1.0E−02
1.0E−01
t, TIME (s)
1.0E+00
1.0E+01 1.0E+02 1.0E+03
Figure 14. Thermal Response
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTMS10P02R2.PDF ] | |
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