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PDF STD25NE03L Data sheet ( Hoja de datos )
| Número de pieza | STD25NE03L | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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® STD25NE03L
N - CHANNEL 30V - 0.019 Ω - 25A - TO-251/TO-252
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(o n)
STD25NE03L 30 V < 0.025 Ω
s TYPICAL RDS(on) = 0.019 Ω
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
ID
25 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BG, LAMPDRIVERS, Etc.)
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
VG S
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage T emperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Va l u e
30
30
± 20
20**
18**
100
45
0.3
-65 to 175
175
(**) Value limited only by the package
March 1999
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/9
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STD25NE03L
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STD25NE03L.PDF ] | |
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