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PDF MPSW01 Data sheet ( Hoja de datos )
| Número de pieza | MPSW01 | |
| Descripción | One Watt High Current Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW01/D
One Watt High Current Transistors
NPN Silicon
COLLECTOR
3
2
BASE
MPSW01
MPSW01A*
*Motorola Preferred Device
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MPSW01
MPSW01A
VCEO
30
40
Vdc
Collector – Base Voltage
MPSW01
MPSW01A
VCBO
40
50
Vdc
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
5.0
1000
1.0
8.0
Vdc
mAdc
Watts
mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 Watts
Derate above 25°C
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
Thermal Resistance, Junction to Case
RqJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPSW01
MPSW01A
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
MPSW01
MPSW01A
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MPSW01
MPSW01A
Preferred devices are Motorola recommended choices for future use and best overall value.
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
30
40
40
50
5.0
—
—
—
Max Unit
Vdc
—
—
Vdc
—
—
— Vdc
µAdc
0.1
0.1
0.1 µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MPSW01.PDF ] | |
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