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PDF STW9NC80Z Data sheet ( Hoja de datos )
| Número de pieza | STW9NC80Z | |
| Descripción | N-CHANNEL 800V - 0.82ohm | |
| Fabricantes | ST Microelectronics | |
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STW9NC80Z
N-CHANNEL 800V - 0.82Ω - 9.4A TO-247
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STW9NC80Z
800 V
<0.9Ω
9.4 A
n TYPICAL RDS(on) = 0.82Ω
n EXTREMELY HIGH dv/dt CAPABILITY
n GATE-TO-SOURCE ZENER DIODES
n 100% AVALANCHE TESTED
n VERY LOW INTRINSIC CAPACITANCES
n GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
TO-247
APPLICATIONS
n SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
n WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
800 V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
800 V
VGS Gate- source Voltage
±25 V
ID Drain Current (continuous) at TC = 25°C
9.4 A
ID Drain Current (continuous) at TC = 100°C
5.9 A
IDM (1)
Drain Current (pulsed)
38 A
PTOT
Total Dissipation at TC = 25°C
190 W
Derating Factor
1.52
W/°C
IGS Gate-source Current
±50 mA
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
4 KV
dv/dt(q)
Peak Diode Recovery voltage slope
3 V/ns
VISO
Insulation Winthstand Voltage (DC)
-- V
Tstg Storage Temperature
–65 to 150
°C
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
150 °C
(1)ISD ≤9.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
September 2002
1/8
1 page  
Gate Charge vs Gate-source Voltage
Capacitance Variations
STW9NC80Z
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STW9NC80Z.PDF ] | |
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