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PDF MPF930 Data sheet ( Hoja de datos )
| Número de pieza | MPF930 | |
| Descripción | (MPF960/MPF990) TMOS Switching | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MPF930 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS Switching
N–Channel — Enhancement
3 DRAIN
2
GATE
Order this document
by MPF930/D
MPF930
MPF960
MPF990
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol MPF930 MPF960 MPF990 Unit
Drain – Source Voltage
VDS
35
60
90 Vdc
Drain – Gate Voltage
VDG
35
60
90 Vdc
Gate–Source Voltage
— Continuous
VGS
± 20 Vdc
— Non–repetitive (tp ≤ 50 µs) VGSM ± 40 Vpk
Drain Current
Adc
Continuous(1) ID 2.0
Pulsed(2)
IDM 3.0
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
1.0 Watts
8.0 mW/°C
Operating and Storage Junction TJ, Tstg
Temperature Range
– 55 to 150
°C
Thermal Resistance
θJA
125
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
MPF930
MPF960
MPF990
V(BR)DSX
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
Zero–Gate–Voltage Drain Current
(VDS = Maximum Rating, VGS = 0)
Gate Threshold Voltage
(ID = 1.0 mAdc, VDS = VGS)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 0.5 Adc)
(ID = 1.0 Adc)
(ID = 2.0 Adc)
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
IGSS
IDSS
VGS(Th)
VDS(on)
v v1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Min
35
60
90
—
—
1.0
—
—
—
—
—
—
—
—
—
1
2
3
CASE 29–05, STYLE 22
TO–92 (TO–226AE)
Typ Max Unit
Vdc
——
——
——
— 50 nAdc
— 10 µAdc
— 3.5 Vdc
Vdc
0.4 0.7
0.6 0.8
0.6 1.2
0.9 1.4
1.2 1.7
1.2 2.4
2.2 3.0
2.8 3.5
2.8 4.8
REV 2
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MPF930.PDF ] | |
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