(PDF) MPSA12 Datasheet - NPN Darlington Transistor

Número de pieza	MPSA12
Descripción	NPN Darlington Transistor
Fabricantes	Fairchild
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No Preview Available ! MPSA12 Discrete POWER & Signal Technologies C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VCES Collector-Emitter Voltage 20 VCBO Collector-Base Voltage 20 VEBO Emitter-Base Voltage 10 IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 1.2 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max MPSA12 625 5.0 83.3 200 Units V V V A °C Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 1 page

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