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PDF STW9NA80 Data sheet ( Hoja de datos )
| Número de pieza | STW9NA80 | |
| Descripción | N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STW9NA80
® STH9NA80FI
N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
TYPE
S TW 9NA8 0
STH9NA80FI
V DSS
800 V
800 V
RDS(on)
< 1.0 Ω
< 1.0 Ω
ID
9.1 A
5.9 A
s TYPICAL RDS(on) = 0.85 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM (•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulat ion W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1998
Value
STW9NA80 STH9NA80FI
800
800
± 30
9.1 5.9
6 3.9
36.4
36.4
190 80
1.52
0.64
4000
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/10
1 page  
Transconductance
STW9NA80-STH9NA80FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STW9NA80.PDF ] | |
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| STW9NA80 | N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR | ST Microelectronics |
| STW9NA80 | Trans MOSFET N-CH 800V 9.1A 3-Pin(3+Tab) TO-247 |  New Jersey Semiconductor |
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