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PDF MTP3055 Data sheet ( Hoja de datos )
| Número de pieza | MTP3055 | |
| Descripción | N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTP3055 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® MTP3055E
N - CHANNEL 60V - 0.1Ω - 12A TO-220
STripFET™ MOSFET
TYPE
VDSS
RDS(on)
ID
M T P 305 5E
60 V < 0.15 Ω 12 A
s TYPICAL RDS(on) = 0.1 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
IDM
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (pulsed) at Tc = 100 oC
IDM (•)
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
July 1999
Va l u e
60
60
± 20
12
9
48
40
-65 to 175
175
Un it
V
V
V
A
A
A
W
oC
oC
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
MTP3055E
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTP3055.PDF ] | |
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