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PDF TM583S-L Data sheet ( Hoja de datos )
| Número de pieza | TM583S-L | |
| Descripción | Triacs | |
| Fabricantes | Sanken | |
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TO-220F 5A Triac
TM583S-L
s Features
qRepetitive peak off-state voltage: VDRM=800V
qRMS on-state current: IT(RMS)=5A
qGate trigger current: IGT=20mA max (MODE , , )
qIsolation voltage: VISO=1500V (50Hz Sine wave, RMS)
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power dissipation
Average gate power dissipation
Junction temperature
Storage temperature
Isolation voltage
Symbol
VDRM
IT (RMS)
ITSM
VGM
IGM
PGM
PG (AV)
Tj
Tstg
VISO
Ratings
800
5.0
45
10
2
5
0.5
– 40 to +125
– 40 to +125
1500
External Dimensions
(Unit: mm)
φ3.3±0.2 10.0±0.2
4.2±0.2
2.8 C 0.5
a
b
1.35±0.15
1.35±0.15
0.85 +– 00..12
2.54
2.54 0.45 +–00..12
2.4±0.2
2.2±0.2
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
a. Part Number
b. Lot Number
(1) (2) (3)
Weight: Approx. 2.1g
Unit
V
A
A
V
A
W
W
°C
°C
Vrms
Conditions
∞RGK= , Tj= –40 to +125°C
Conduction angle= 360°, Tc=101°C
50Hz full-cycle sine wave, Peak value, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz, duty 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Off-state current
On-state voltage
Symbol
IDRM
VTM
min
Gate trigger voltage
VGT
Gate trigger current
IGT
Gate non-trigger voltage
Holding current
Rising rate of off-state voltage in commutating
Thermal resistance
VGD
IH
(dv/dt)c
Rth
0.2
5
Ratings
typ
1.3
0.7
0.8
7
10
12
20
max
2.0
0.1
1.6
2.0
2.0
2.0
20
20
20
4.0
Unit
mA
V
V
mA
V
mA
V/µs
°C/W
(Tj=25°C, unless otherwise specified)
Conditions
∞VD=VDRM, RGK= , Tj=125°C
∞VD=VDRM, RGK= , Tj=25°C
ITM=7A, Tc=25°C
VD=6V, RL=10Ω, Tc=25°C
VD=6V, RL=10Ω, Tc=25°C
T2+, G+
T2+, G–
T2–, G–
T2+, G+
T2+, G–
T2–, G–
VD=1/2 × VDRM, Tj=125°C
Tj = 25°C
VD=400V, (di/dt)c = –2A/ms, Tj=125°C, IT=1A
Junction to Case
34
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