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Número de pieza | SPA04N60C2 | |
Descripción | Cool MOS Power Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPA04N60C2 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! Final data
SPP04N60C2, SPB04N60C2
SPA04N60C2
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
Product Summary
VDS @ Tjmax 650
RDS(on)
0.95
ID 4.5
V
Ω
A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Type
SPP04N60C2
SPB04N60C2
SPA04N60C2
P-TO220-3-31
3
12
Package
Ordering Code
P-TO220-3-1 Q67040-S4304
P-TO263-3-2 Q67040-S4305
P-TO220-3-31 Q67040-S4330
Marking
04N60C2
04N60C2
04N60C2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=3.6A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4.5A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IS = 4.5 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Page 1
Symbol
Value
SPP_B SPA
ID
4.5 4.51)
2.8 2.81)
ID puls
EAS
9
130
9
130
Unit
A
A
mJ
EAR 0.4 0.4
IAR 4.5 4.5 A
dv/dt
6
6 V/ns
VGS
VGS
Ptot
Tj , Tstg
±20 ±20 V
±30 ±30
50 31 W
-55...+150
°C
2002-08-12
1 page 1 Power dissipation
Ptot = f (TC)
Final data
SPP04N60C2, SPB04N60C2
SPA04N60C2
2 Power dissiaption FullPAK
Ptot = f (TC)
SPP04N60C2
55
W
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 1
A
40
W
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 1
A
10 0
10 0
10 -1
10
-2
10
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
tp = 0.001 ms
10 -1
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 1
10 2 V 10 3
10
-2
10
0
10 1
10 2 V 10 3
VDS
VDS
Page 5
2002-08-12
5 Page Final data
SPP04N60C2, SPB04N60C2
SPA04N60C2
Definition of diodes switching characteristics
Page 11
2002-08-12
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet SPA04N60C2.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPA04N60C2 | Cool MOS Power Transistor | Infineon |
SPA04N60C2 | Cool MOS Power Transistor | Infineon Technologies |
SPA04N60C3 | Cool MOS Power Transistor | Infineon |
SPA04N60C3 | Cool MOS& Power Transistor | Infineon Technologies |
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