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PDF SFH601-1 Data sheet ( Hoja de datos )
| Número de pieza | SFH601-1 | |
| Descripción | PHOTOTRANSISTOR OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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SFH601 SERIES
TRIOS®* PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• High Current Transfer Ratios
SFH601-1, 40 to 80%
SFH601-2, 63 to 125%
SFH601-3 ,100 to 200%
SFH601-4, 160 to 320%
• Isolation Test Voltage (1 Sec.), 5300 VACRMS
• VCEsat 0.25 (≤0.4) V, IF=10 mA, IC=2.5 mA
• Built to conform to VDE Requirements
• Highest Quality Premium Device
• Long Term Stability
• Storage Temperature, –55∞ to +150∞C
• Underwriters Lab File #E52744
• CECC Approved
• V VDE 0884 Available with Option 1
DE
DESCRIPTION
The SFH601 is an optocoupler with a Gallium Ars-
enide LED emitter which is optically coupled with a
silicon planar phototransistor detector. The compo-
nent is packeged in a plastic plug-in case 20 AB
DIN 41866.
The coupler transmits signals between two electri-
cally isolated circuits.
Maximum Ratings
Emitter
Reverse Voltage................................................. 6 V
DC Forward Current...................................... 60 mA
Surge Forward Current (tp=10 µs).................. 2.5 A
Total Power Dissipation.............................. 100 mW
Detector
Collector-Emitter Voltage .............................. 100 V
Emitter-Base Voltage ......................................... 7 V
Collector Current........................................... 50 mA
Collector Current (t=1 ms) .......................... 100 mA
Power Dissipation ...................................... 150 mW
Package
Isolation Test Voltage (between emitter and
detector referred to climate DIN 40046,
part 2, Nov. 74) (t=1 sec.)..............5300 VACRMS
Creepage ........................................................... ≥7 mm
Clearance .......................................................... ≥7 mm
Isolation Thickness between Emitter and
Detector....................................................... ≥0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE0303, part 1........................175
Isolation Resistance
VIO=500 V, TA=25°C................................... ≥1012 Ω
VIO=500 V, TA=100°C................................. ≥1011 Ω
Storage Temperature Range........ –55°C to +150°C
Ambient Temperature Range....... –55°C to +100°C
Junction Temperature ....................................100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane ≥1.5 mm) ..........260°C
Dimensions in inches (mm)
321
.248 (6.30)
.256 (6.50)
Pin One ID
Anode 1
Cathode 2
6 Base
5 Collector
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
4 56
.335 (8.50)
.343 (8.70)
NC 3
4 Emitter
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Characteristics (TA=25°C)
Symbol
Emitter
Forward Voltage
VF
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
Capacitance
Collector-Emitter
Collector-Base
Emitter-Base
Thermal Resistance
Package
Saturation Voltage,
Collector-Emitter
VBR
IR
CO
RTHJamb
CCE
CCB
CEB
RTHJamb
VCEsat
1.25
(≤1.65)
≥6
0.01 (≤10)
25
750
6.8
8.5
11
500
0.25 (≤0.4)
Unit
V
V
µA
pF
°C/W
pF
°C/W
V
Coupling Capacitance CIO
0.6
pF
Condition
IF=60 mA
IR=10 µA
VR=6 V
VF=0 V, f=1 MHz
f=1 MHz
VCE=5 V
VCB=5 V
VEB=5 V
IF=10 mA,
IC=2.5 mA
VI-O=0, f=1 MHz
*TRIOS—TRansparent IOn Shield
5–1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SFH601-1.PDF ] | |
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