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PDF SFH487-2 Data sheet ( Hoja de datos )
| Número de pieza | SFH487-2 | |
| Descripción | GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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GaAIAs-IR-Lumineszenzdiode (880nm)
GaAIAs Infrared Emitter (880 nm)
SFH 487
Area not flat
0.6
0.4
5.2
4.5 4.1
3.9
4.0
3.6
1.8
1.2
29 6.3
27 5.9
Cathode (SFH 409)
Anode (SFH 487)
Approx. weight 0.3 g
(3.5)
Chip position
0.6
0.4
GEX06250
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Hergestellt im Schmelzepitaxieverfahren
q Hohe Zuverlässigkeit
q Hohe Impulsbelastbarkeit
q Gute spektrale Anpassung an
Si-Fotoempfänger
q Gehäusegleich mit SFH 309, SFH 409
Anwendungen
q IR-Fernsteuerung von Fernseh-, Rundfunk-
und Videogeräten, Lichtdimmern
q Lichtschranken bis 500 kHz
Features
q Fabricated in a liquid phase epitaxy process
q High reliability
q High pulse handling capability
q Good spectral match to silicon
photodetectors
q Same package as SFH 309, SFH 409
Applications
q IR remote control for hifi and TV sets, video
tape recorder, dimmers
q Light-reflection switches (max. 500 kHz)
Typ
Type
SFH 487
SFH 487-2
Bestellnummer
Ordering Code
Q62703-Q1095
Q62703-Q2174
Gehäuse
Package
3-mm-LED-Gehäuse (T1), klares violettes Epoxy-
Gieβharz, Anschlüsse im 2.54-mm-Raster (1/10’’),
Anodenkennzeichnung: kürzerer Anschluβ
3 mm LED package (T1), violet-colored transparent
epoxy resin, solder tabs lead spacing 2.54 mm (1/10’’),
anode marking: short lead
Semiconductor Group
1
1997-11-01
1 page  
SFH 487
Relative spectral emission
Irel = f (λ)
100
%
Ι rel
80
OHR00877
60
40
20
0
750 800 850 900 950 nm 1000
λ
Forward current, IF = f (VF)
Single pulse, tp = 20 µs
10 1
ΙF A
10 0
OHR00881
10 -1
10 -2
10 -3
0 12 3 4 5 6V 8
VF
Radiant intensity
Ie
Ie 100 mA
=
f
(IF)
Single pulse, tp = 20 µs
10 2
OHR00878
Ιe
Ι e (100mA)
10 1
Max. permissible forward current
IF = f (TA)
125
Ι F mA
100
OHR00880
10 0 75
10 -1 50
10 -2 25
10 -3
10 0 10 1 10 2 10 3 mA 10 4
ΙF
Permissible pulse handling capability
IF = f (τ), TA = 25 oC,
duty cycle D = parameter
104 OHR00886
mA
ΙF
103 0.1
D = 0.005
0.01
0.02
0.05
0.2
0.5
102 DC
D
=
tp
T
tp
ΙF
T
10 1
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
101 s 102
tp
0 0 20 40 60 80 ˚C 100
T
Forward current versus lead length
between the package bottom and the
PC-board IF = f (I), TA = 25 oC
120 OHR00949
mA
Ι F 100
80
60
40
20
0
0 5 10 15 20 25 mm 30
Semiconductor Group
5
1997-11-01
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SFH487-2.PDF ] | |
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