|
|
PDF SFH4860 Data sheet ( Hoja de datos )
| Número de pieza | SFH4860 | |
| Descripción | GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SFH4860 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
GaAlAs-Lumineszenzdiode (660 nm)
GaAlAs Light Emitting Diode (660 nm)
SFH 4860
Chip position
14.5 (2.7)
12.5
Cathode 4.05
3.45
Flat glass cap
ø2.54
5.5
5.2
GMO06983
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Strahlung im sichtbaren Rotbereich ohne
IR-Anteil
q Kathode galvanisch mit dem
Gehäuseboden verbunden
q Sehr hoher Wirkungsgrad
q Hohe Zuverlässigkeit
q Kurze Schaltzeiten
Anwendungen
q Lichtschranken für Gleich- und
Wechsellichtbetrieb bis 5 MHz
q Hermetisch dichtes Gehäuse
Features
q Radiation without IR in the visible red range
q Cathode is electrically connected to the case
q Very high efficiency
q High reliability
q Short switching time
Applications
q Photointerrupters
q Hermetically sealed package
Typ
Type
SFH 4860
Bestellnummer
Ordering Code
Q62702-P5053
Gehäuse
Package
18 A3 DIN 41876 (TO-18), Bodenplatte, Plankappe,
Anschlüsse im 2.54-mm-Raster (1/10’’),
Anodenkennzeichnung: Nase am Gehäuseboden
18 A3 DIN 870 (TO -18), flat glass cap, lead spacing
2.54 mm (1/10’’),
anode marking: projection at package bottom
Semiconductor Group
1
1998-08-25
1 page  
SFH 4860
Relative spectral emission
Irel = f (λ)
100
Ι rel %
80
OHR01869
60
40
20
0
600 650 700 nm 750
λ
Forward current
IF = f (VF), single pulse, tp = 20 µs
10 3
Ι F mA
OHR01871
10 2
10 1
Radiant intensity
Ie
Ie 50 mA
Single pulse, tp = 20 µs
10 2
= f (IF)
OHR01870
Ιe
Ι e 50 mA
10 1
10 0
Max. permissible forward current
IF = f (TC), RthJC = 160 K/W
120
Ι F mA
100
OHR00390
80
60
40
10 -1
20
10 -2
10 0 10 1 10 2 mA 10 3
ΙF
Permissible pulse handling capability
IF = f (τ), TA = 25 °C,
duty cycle D = parameter
10 4
mA
ΙF
D
=
tP
T
tP
T
OHR01872
ΙF
10 3
0.1
0.2
D=
0.005
0.01
0.02
0.05
10 2 0.5
DC
0
0 20 40 60 80 100 ˚C 130
TA
Max. permissible forward current
IF = f (TA), RthJA = 450 K/W
120
Ι F mA
100
OHR00391
80
60
40
20
10 0 0 2 4 6 8 V 10
VF
Radiation characteristics Irel = f (ϕ)
40 30 20 10
ϕ
50
60
0
1.0
0.8
0.6
10 1
10 -5 10 -4 10 -3 10 -2 10 -1
s 10 1
tP
OHR00389
0
0
20
40
60
80 100 ˚C 130
TA
70 0.4
80 0.2
0
90
100
1.0 0.8 0.6
0.4
0 20 40 60 80 100 120
Semiconductor Group
5
1998-08-25
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SFH4860.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SFH486 | GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm | Siemens Semiconductor Group |
| SFH4860 | GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm | Siemens Semiconductor Group |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |