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PDF SFH485-2 Data sheet ( Hoja de datos )
| Número de pieza | SFH485-2 | |
| Descripción | GaAlAs INFRARED EMITTER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SFH485-2 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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GaAIAs-IR-Lumineszenzdioden (880 nm)
GaAIAs Infrared Emitters (880 nm)
SFH 484
SFH 485
Area not flat
0.6
9.0
8.2
0.4 7.8
7.5
Cathode
5.9
5.5
1.8
1.2
29
27
Approx. weight 0.5 g
5.7
5.1
Chip position
0.6
0.4
GEX06271
Area not flat
0.6
9.0 Cathode
8.2
0.4 7.8
5.9
7.5 5.5
1.5
29
27
4.8
4.2
Chip position
0.6
0.4
GEX06305
Approx. weight 0.5 g
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Hergestellt im Schmelzepitaxieverfahren
q Hohe Zuverlässigkeit
q Gute spektrale Anpassung an
Si-Fotoempfänger
q SFH 484: Gehäusegleich mit LD 274
q SFH 485: Gehäusegleich mit SFH 300,
SFH 203
Anwendungen
q IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
q Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
Features
q Fabricated in a liquid phase epitaxy process
q High reliability
q Spectral match with silicon photodetectors
q SFH 484: Same package as LD 274
q SFH 485: Same package as SFH 300,
SFH 203
Applications
q IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
q Remote control for steady and varying
intensity
Semiconductor Group
1
1997-11-01
1 page  
SFH 484
SFH 485
Relative spectral emission
Irel = f (λ)
100
OHR00877
%
Ι rel
80
Radiant intensity
Ie = f
Ie 100 mA
(IF)
Single pulse, tp = 20 µs
10 2 OHR00878
Ιe
Ι e (100mA)
10 1
Max. permissible forward current
IF = f (TA)
125 OHR00880
Ι F mA
100
60 10 0 75
40 10 -1 50
20 10 -2 25
0
750 800 850 900 950 nm 1000
λ
Forward current
IF = f (VF), single pulse, tp = 20 µs
10 1
ΙF A
10 0
OHR00881
10 -1
10 -2
10 -3
0 12 3 4 5 6V 8
VF
10 -3
10 0 10 1 10 2 10 3 mA 10 4
ΙF
Permissible pulse handling capability
IF = f (τ), TA = 25 °C,
duty cycle D = parameter
104 OHR00886
mA
ΙF
103 0.1
D = 0.005
0.01
0.02
0.05
0.2
0.5
102 DC
D
=
tp
T
tp
ΙF
T
10 1
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
101 s 102
tp
Radiation characteristics, SFH 485 Irel = f (ϕ)
40 30 20 10 0
ϕ 1.0
50
0.8
OHR01892
0 0 20 40 60 80 ˚C 100
T
Forward current versus lead length
between the package bottom and the
PC-board IF = f (I), TA = 25 °C
120 OHR00949
mA
Ι F 100
80
60
40
20
0
0 5 10 15 20 25 mm 30
60 0.6
70 0.4
80 0.2
90 0
100
1.0 0.8 0.6
0.4
0 20 40 60 80 100 120
Semiconductor Group
5
1997-11-01
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SFH485-2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SFH485-1 | GaAlAs INFRARED EMITTER | Siemens Semiconductor Group |
| SFH485-2 | GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm | Siemens Semiconductor Group |
| SFH485-2 | GaAlAs INFRARED EMITTER | Siemens Semiconductor Group |
| SFH485-3 | GaAlAs INFRARED EMITTER | Siemens Semiconductor Group |
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