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PDF SFH4591 Data sheet ( Hoja de datos )
| Número de pieza | SFH4591 | |
| Descripción | Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Schnelle GaAlAs-IR-Lumineszenzdiode
High-Speed GaAlAs Infrared Emitter
SFH 4591
SFH 4592
Area not flat
9.0
0.6
0.4
8.2
7.8
7.5
5.9
5.5
Anode
1.8
1.2
29.5
27.5
5.7
5.1
Chip position
Area not flat
0.6
9.0
8.2
0.4 7.8
7.5
0.6
0.4
GEX06626
5.9
5.5
SFH 4591
Anode
1.8
1.2
29
27
4.8
4.2
Chip position
0.6
0.4
SFH 4592
Approx. weight 0.2 g
GEX06984
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Hohe Pulsleistung sowie hoher
Gesamtstrahlungsfluß Φe
q Sehr kurze Schaltzeiten (10 ns)
q Geringe Vorwärtsspannung und
Leistungsaufnahme
q Sehr hohe Langzeitstabilität
q Gegurtet lieferbar
Features
q High pulse power and high radiant flux Φe
q Very short switching times (10 ns)
q Low forward voltage and power dissipation
q Very high long-time stability
q Available on tape and reel
Anwendungen
q Schnelle Datenübertragung mit
Übertragungsraten bis 100 Mbaud
(IR Tastatur, Joystick, Multimedia)
q Analoge und digitale Hi-Fi Audio- und Video-
signalübertragung
q Batteriebetriebene Geräte (geringe Strom-
aufnahme)
q Anwendungen mit hohen Zuverlässigkeits-
ansprüchen bzw. erhöhten Anforderungen
q Alarm- und Sicherungssysteme
q IR Freiraumübertragung
Applications
q High data transmission rate up to 100 Mbaud
(IR keyboard, Joystick, Multimedia)
q Analog and digital Hi-Fi audio and video
signal transmission
q Low power consumption (battery) equipment
q Suitable for professional and high-reliability
applications
q Alarm and safety equipment
q IR free air transmission
Semiconductor Group
1
1998-09-08
1 page  
SFH 4591
SFH 4592
Relative spectral emission
Irel = f (λ)
100
%
Ιrel 90
OHF00366
80
70
60
50
40
30
20
10
0
700 750 800 850 900 nm 1000
λ
Forward current IF = f (VF)
single pulse, tp = 20 µs
10 1
ΙF A
OHF00362
10 0
10 -1
10 -2
0 0.5 1 1.5 2 2.5 V 3
VF
Permissible pulse power
Duty cycle D = parameter, TA = 25 °C
10 1
ΙF A
5
D
=
tp
T
tp
T
OHF00361
ΙF
D = 0.005
0.01
0.02
10 0
0.05
0.1
0.2
0.5
5
10 -1
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
Semiconductor Group
Radiant intensity
-------I--e-------
I e 100 m A
=
f (IF)
Single pulse, tp = 20 µs
Ι e 102
Ι e (100 mA)
OHF00363
10 1
Max. permissible forward current
IF = f (TA)
120
Ι F mA
100
OHF00359
80
RthjA= 375 K/W
100 60
40
10 -1
20
10 -2
10-2 10-1 100 A 101
ΙF
00
Radiation characteristics Irel = f (ϕ), SFH 4591
20 40 60 80 100 ˚C 120
TA
40˚
50˚
30˚ 20˚ 10˚ 0˚
ϕ 1.0
0.8
OHF00365
60˚
0.6
70˚ 0.4
80˚ 0.2
90˚ 0
100˚
1.0 0.8 0.6
0.4
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Radiation characteristics Irel = f (ϕ), SFH 4592
40˚
50˚
30˚ 20˚ 10˚ 0˚
ϕ 1.0
0.8
60˚ 0.6
OHR00397
70˚ 0.4
80˚ 0.2
0
90˚
100˚
1.0 0.8 0.6
0.4
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
5 1998-09-08
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SFH4591.PDF ] | |
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