|
|
PDF PSMN130-200D Data sheet ( Hoja de datos )
| Número de pieza | PSMN130-200D | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | Philips | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PSMN130-200D (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
DISCRETE SEMICONDUCTORS
DATA SHEET
PSMN130-200D
N-channel TrenchMOS(TM)
transistor
Product specification
August 1999
1 page  
Philips Semiconductors
N-channel TrenchMOS(TM) transistor
Product specification
PSMN130-200D
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
Mounting Base temperature, Tmb (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
175
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125
Mounting Base temperature, Tmb (C)
150
175
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); VGS ≥ 10 V
Peak Pulsed Drain Current, IDM (A)
100
RDS(on) = VDS/ ID
10
D.C.
1
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.1
1
10 100
Drain-Source Voltage, VDS (V)
1000
Fig.3. Safe operating area
ID & IDM = f(VDS); IDM single pulse; parameter tp
10 Transient thermal impedance, Zth j-mb (K/W)
1 D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
single pulse
0.001
1E-06
1E-05
PD tp D = tp/T
T
1E-04 1E-03 1E-02
Pulse width, tp (s)
1E-01
1E+00
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
20 Drain Current, ID (A)
Tj = 25 C
18
16
VGS = 10V
8V
6V
5.4 V
14 5.2 V
12
10 5 V
8
6 4.8 V
4 4.6 V
2
4.4 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.3
4.4 V 4.6 V 4.8 V
5V
0.25
Tj = 25 C
0.2
5.2 V
0.15
5.4 V
0.1 6V
0.05 8 V VGS = 10V
0
0 2 4 6 8 10 12 14 16 18 20
Drain Current, ID (A)
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID)
August 1999
5
Rev 1.000
5 Page 
Philips Semiconductors
N-channel TrenchMOS(TM) transistor
NOTES
Product specification
PSMN130-200D
August 1999
11
Rev 1.000
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PSMN130-200D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PSMN130-200D | N-channel TrenchMOS transistor | Philips |
| PSMN130-200D | N-channel TrenchMOS SiliconMAX standard level FET |  NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |