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PDF PSMN009-100W Data sheet ( Hoja de datos )
| Número de pieza | PSMN009-100W | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | Philips | |
| Logotipo |  |
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Philips Semiconductors
TrenchMOS™ transistor
Objective specification
PSMN009-100W
FEATURES
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 100 V
ID = 100 A
RDS(ON) ≤ 9 mΩ
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope using ’trench’
technology. The device has very
low on-state resistance. It is
intended for use in dc to dc
converters and general purpose
switching applications.
The PSMN009-100W is supplied in
the SOT429 (TO247) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
1001
79
300
300
175
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 96 A;
energy
tp = 0.2 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 5 V
IAS Non-repetitive avalanche
current
MIN.
-
MAX.
1255
UNIT
mJ
- 100 A
1 Maximum continuous current limited by package.
February 1999
1
Rev 1.000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet PSMN009-100W.PDF ] | |
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