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Número de pieza | NE25118 | |
Descripción | GENERAL PURPOSE DUAL-GATE GaAS MESFET | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NE25118 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25118
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
• LOW CRSS: 0.02 pF (TYP)
• HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
• LOW PACKAGE HEIGHT: 1.0 mm MAX
DESCRIPTION
The NE25118 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a 4 pin super mini-mold
package, (SOT-343 type). Maximum package height of 1.0
mm makes the NE25118 an ideal device for PCMCIA card
applications.
POWER GAIN AND NOISE FIGURE
vs.
DRAIN TO SOURCE VOLTAGE
GPS
20 10
VG2S = 1 V
VG2S = 0.5 V
VG2S = 2 V
ID = 10 mA
10 5
f = 900 MHz
NF
0
05
10
Drain to Source Voltage, VDS (V)
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
NF
GPS
BVDSX
IDSS
VG1S (OFF)
VG2S (OFF)
IG1SS
IG2SS
|YFS|
CISS
CRSS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S = 0, ID = 10 µA
Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V
Gate 1 to Source Cutoff Voltage at VDS = 5 V,
VG2S = 0 V, ID = 100 µA
Gate 2 to Source Cutoff Voltage at VDS = 5 V,
VG1S = 0 V, ID = 100 µA
Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0
Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0
Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1.0 kHz
Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
µA
µA
mS
pF
pF
MIN
16
13
5
-3.5
-3.5
18
0.5
NE25118
18
TYP
MAX
1.1 2.5
20
20 40
10
10
25 35
1.0 1.5
0.02 0.03
California Eastern Laboratories
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet NE25118.PDF ] |
Número de pieza | Descripción | Fabricantes |
NE25118 | GENERAL PURPOSE DUAL-GATE GaAS MESFET | NEC |
NE25118-T1 | GENERAL PURPOSE DUAL-GATE GaAS MESFET | NEC |
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